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ISL8484
Data Sheet June 14, 2007 FN6128.3
Ultra Low ON-Resistance, +1.65V to +4.5V, Single Supply, Dual SPDT Analog Switch
The Intersil ISL8484 device is a low ON-resistance, low voltage, bidirectional, dual single-pole/double-throw (SPDT) analog switch designed to operate from a single +1.65V to +4.5V supply. Targeted applications include battery powered equipment that benefit from low rON (0.23) and fast switching speeds (tON = 20ns, tOFF = 15ns). The digital logic input is 1.8V logic-compatible when using a single +3V supply. With a supply voltage of 4.2V and logic high voltage of 2.85V at both logic inputs, the part draws only 10A max of I+ current. Cell phones, for example, often face ASIC functionality limitations. The number of analog input or GPIO pins may be limited and digital geometries are not well suited to analog switch performance. This part may be used to "mux-in" additional functionality while reducing ASIC design risk. The ISL8484 is offered in small form factor packages, alleviating board space limitations. The ISL8484 is a committed dual single-pole/double-throw (SPDT) that consist of two normally open (NO) and two normally closed (NC) switches. This configuration can be used as a dual 2-to-1 multiplexer. The ISL8484 is pin compatible with the MAX4684 and MAX4685.
TABLE 1. FEATURES AT A GLANCE ISL8484 Number of Switches SW 4.3V rON 4.3V tON/tOFF 3V rON 3V tON/tOFF 1.8V rON 1.8V tON/tOFF Packages 2 SPDT or 2-to-1 MUX 0.23 20ns/15ns 0.27 25ns/20ns 0.45 65ns/50ns 10 Ld 3x3 Thin DFN, 10 Ld MSOP
Features
* Pin Compatible Replacement for the MAX4684 and MAX4685 * ON-Resistance (rON ) - V+ = +4.3V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.23 - V+ = +3.0V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27 - V+ = +1.8V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.45 * rON Matching Between Channels. . . . . . . . . . . . . . . . . 0.03 * rON Flatness Across Signal Range . . . . . . . . . . . . . . . 0.03 * Single Supply Operation . . . . . . . . . . . . . . . +1.65V to +4.5V * Low Power Consumption (PD). . . . . . . . . . . . . . . . <0.3W * Fast Switching Action (V+ = +4.3V) - tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20ns - tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15ns * ESD HBM Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>9kV * Guaranteed Break-before-Make * 1.8V Logic Compatible (+3V supply) * Low I+ Current when VinH is not at the V+ Rail * Available in 10 Ld 3x3 TDFN and 10 Ld MSOP * Pb-Free Plus Anneal Available (RoHS Compliant)
Applications
* Battery powered, Handheld, and Portable Equipment - Cellular/mobile Phones - Pagers - Laptops, Notebooks, Palmtops * Portable Test and Measurement * Medical Equipment * Audio and Video Switching
Related Literature
* Technical Brief TB363 "Guidelines for Handling and Processing Moisture Sensitive Surface Mount Devices (SMDs)" * Application Note AN557 "Recommended Test Procedures for Analog Switches"
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2006-2007. All Rights Reserved All other trademarks mentioned are the property of their respective owners.
ISL8484 Pinout
(Note 1) ISL8484 (10 LD TDFN, MSOP) TOP VIEW
V+ 1 NO1 2 COM1 3 IN1 4 NC1 5 10 NO2 9 COM2 8 IN2 7 NC2 6 GND
Truth Table
LOGIC 0 1 NOTE: PIN NC1 and NC2 ON OFF PIN NO1 and NO2 OFF ON
Logic "0" 0.5V. Logic "1" 1.4V with a 3V supply.
Pin Descriptions
PIN V+ GND FUNCTION System Power Supply Input (+1.65V to +4.5V) Ground Connection Digital Control Input Analog Switch Common Pin Analog Switch Normally Open Pin Analog Switch Normally Closed Pin
NOTE: 1. Switches Shown for Logic "0" Input.
IN COM NO NC
Ordering Information
PART NUMBER ISL8484IR ISL8484IR-T ISL8484IU ISL8484IU-T ISL8484IRZ (Note) ISL8484IRZ-T (Note) ISL8484IUZ (Note) ISL8484IUZ-T (Note) PART MARKING 484 484 8484 8484 484Z 484Z 8484Z 8484Z TEMP. RANGE (C) -40 to +85 -40 to +85 -40 to +85 -40 to +85 -40 to +85 -40 to +85 -40 to +85 -40 to +85 10 Ld 3x3 TDFN 10 Ld 3x3 TDFN Tape and Reel 10 Ld MSOP 10 Ld MSOP Tape and Reel 10 Ld 3x3 TDFN (Pb-free) 10 Ld 3x3 TDFN Tape and Reel (Pb-free) 10 Ld MSOP (Pb-free) 10 Ld MSOP Tape and Reel (Pb-free) PACKAGE PKG. DWG. # L10.3x3A L10.3x3A M10.118 M10.118 L10.3x3A L10.3x3A M10.118 M10.118
NOTE: Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
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Absolute Maximum Ratings
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 5.5V Input Voltages NO, NC, IN (Note 2). . . . . . . . . . . . . . . . . . . . . . -0.5 to ((V+) +0.5V) Output Voltages COM (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5 to ((V+) +0.5V) Continuous Current NO, NC, or COM . . . . . . . . . . . . . . . . . 300mA Peak Current NO, NC, or COM (Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . . 500mA ESD Rating: Human Body Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>9kV Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>500V Charged Device Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>1kV
Thermal Information
Thermal Resistance (Typical) JA (C/W) 10 Ld 3x3 TDFN Package (Note 3) . . . . . . . . . . . . . 90 10 Ld MSOP Package (Note 4) . . . . . . . . . . . . . . . . 140 Maximum Junction Temperature (Plastic Package). . . . . . . +150C Maximum Storage Temperature Range . . . . . . . . . . . -65C to +150C Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below http://www.intersil.com/pbfree/Pb-FreeReflow.asp
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and result in failures not covered by warranty.
NOTES: 2. Signals on NC, NO, IN, or COM exceeding V+ or GND are clamped by internal diodes. Limit forward diode current to maximum current ratings. 3. JA is measured in free air with the component mounted on a high effective thermal conductivity test board with "direct attach" features. See Tech Brief TB379. 4. JA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications - 3V Supply
Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Notes 5, 7), Unless Otherwise Specified. TEST CONDITIONS TEMP (C) MIN (NOTE 6) TYP MAX (NOTE 6) UNITS
PARAMETER ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON-Resistance, rON
Full V+ = 3.9V, ICOM = 100mA, VNO or VNC = 0V to V+, (See Figure 5) V+ = 3.9V, ICOM = 100mA, VNO or VNC = Voltage at max rON , (Note 10) V+ = 3.9V, ICOM = 100mA, VNO or VNC = 0V to V+, (Note 8) V+ = 4.5V, VCOM = 0.3V, 3V, VNO or VNC = 3V, 0.3V 25 Full 25 Full 25 Full 25 Full V+ = 4.5V, VCOM = 0.3V, 3V, or VNO or VNC = 0.3V, 3V, or Floating 25 Full
0 0.23 0.26 0.03 0.04 0.03 0.04 -100 -195 -100 -195
V+ 0.4 0.6
V
rON Matching Between Channels, rON rON Flatness, rFLAT(ON)
NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) COM ON Leakage Current, ICOM(ON) DYNAMIC CHARACTERISTICS Turn-ON Time, tON
100 195 100 195
nA nA nA nA
V+ = 3.9V, VNO or VNC = 3.0V, RL = 50, CL = 35pF, (See Figure 1, Note 9) V+ = 3.9V, VNO or VNC = 3.0V, RL = 50, CL = 35pF, (See Figure 1, Note 9) V+ = 4.5V, VNO or VNC = 3.0V, RL = 50, CL = 35pF, (See Figure 3, Note 9) CL = 1.0nF, VG = 0V, RG = 0, (See Figure 2) RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 4) RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 6)
25 Full 25 Full Full 25 25 25 2
20
30 35
ns ns ns ns ns pC dB dB
Turn-OFF Time, tOFF
15
25 30
Break-Before-Make Time Delay, td Charge Injection, Q OFF Isolation Crosstalk (Channel-to-Channel)
4 128 68 -95
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ISL8484
Electrical Specifications - 3V Supply
Test Conditions: V+ = +3.9V to +4.5V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Notes 5, 7), Unless Otherwise Specified. (Continued) TEST CONDITIONS f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600 TEMP (C) 25 25 25 MIN (NOTE 6) TYP 0.003 115 224 MAX (NOTE 6) UNITS % pF pF
PARAMETER Total Harmonic Distortion
NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7)
POWER SUPPLY CHARACTERISTICS Power Supply Range Positive Supply Current, I+ V+ = +4.5V, VIN = 0V or V+ Full 25 Full Positive Supply Current, I+ V+ = +4.2V, VIN = 2.85V 25 1.65 4.5 0.1 1 12 V A A A
DIGITAL INPUT CHARACTERISTICS Input Voltage Low, VINL Input Voltage High, VINH Input Current, IINH, IINL NOTES: 5. VIN = input voltage to perform proper function. 6. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 7. Parts are 100% tested at +25C. Limits across the full temperature range are guaranteed by design and correlation. 8. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal range. 9. Guaranteed but not tested. 10. rON matching between channels is calculated by subtracting the channel with the highest max rON value from the channel with lowest max rON value, between NC1 and NC2 or between NO1 and NO2. V+ = 4.5V, VIN = 0V or V+, (Note 9) Full Full Full 1.4 -0.5 0.5 0.5 V V A
Electrical Specifications - 3V Supply
Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Notes 11, 13), Unless Otherwise Specified TEST CONDITIONS TEMP (C) MIN (NOTE 12) TYP MAX (NOTE 12) UNITS
PARAMETER ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON-Resistance, rON
Full V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+, (See Figure 5) V+ = 2.7V, ICOM = 100mA, VNO or VNC = Voltage at max rON , (Note 16) V+ = 2.7V, ICOM = 100mA, VNO or VNC = 0V to V+, (Note 14) V+ = 3.3V, VCOM = 0.3V, 3V, VNO or VNC = 3V, 0.3V 25 Full 25 Full 25 Full 25 Full V+ = 3.3V, VCOM = 0.3V, 3V, or VNO or VNC = 0.3V, 3V, or Floating 25 Full
0 0.29
V+ 0.4 0.6 0.03 0.06 0.06 0.03 0.15 0.15 1.1 25 1.7 48
V nA nA nA nA
rON Matching Between Channels, rON rON Flatness, RFLAT(ON)
NO or NC OFF Leakage Current, INO(OFF) or INC(OFF) COM ON Leakage Current, ICOM(ON) DYNAMIC CHARACTERISTICS Turn-ON Time, tON
V+ = 2.7V, VNO or VNC = 1.5V, RL = 50, CL = 35pF, (See Figure 1, Note 15) V+ = 2.7V, VNO or VNC = 1.5V, RL = 50, CL = 35pF, (See Figure 1, Note 15)
25 Full 25 Full
25
35 40
ns ns ns ns
Turn-OFF Time, tOFF
20
30 35
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ISL8484
Electrical Specifications - 3V Supply
Test Conditions: V+ = +2.7V to +3.3V, GND = 0V, VINH = 1.4V, VINL = 0.5V (Notes 11, 13), Unless Otherwise Specified (Continued) TEST CONDITIONS V+ = 3.3V, VNO or VNC = 1.5V, RL = 50, CL = 35pF, (See Figure 3, Note 15) CL = 1.0nF, VG = 0V, RG = 0, (See Figure 2) RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 4) RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 6) f = 20Hz to 20kHz, VCOM = 2VP-P, RL = 600 TEMP (C) Full 25 25 25 25 25 25 MIN (NOTE 12) 2 TYP 6 95 68 -95 0.003 115 224 MAX (NOTE 12) UNITS ns pC dB dB % pF pF
PARAMETER Break-Before-Make Time Delay, td Charge Injection, Q OFF Isolation Crosstalk (Channel-to-Channel) Total Harmonic Distortion
NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7)
POWER SUPPLY CHARACTERISTICS Positive Supply Current, I+ V+ = +3.6V, VIN = 0V or V+ 25 Full DIGITAL INPUT CHARACTERISTICS Input Voltage Low, VINL Input Voltage High, VINH Input Current, IINH, IINL NOTES: 11. VIN = input voltage to perform proper function. 12. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 13. Parts are 100% tested at +25C. Limits across the full temperature range are guaranteed by design and correlation. 14. Flatness is defined as the difference between maximum and minimum value of on-resistance over the specified analog signal range. 15. Guaranteed but not tested. 16. rON matching between channels is calculated by subtracting the channel with the highest max rON value from the channel with lowest max rON value, between NC1 and NC2 or between NO1 and NO2. V+ = 3.3V, VIN = 0V or V+ (Note 15) 25 25 Full 1.4 -0.5 0.5 0.5 V V A 0.014 0.52 A A
Electrical Specifications - 1.8V Supply
Test Conditions: V+ = +1.65V to +2V, GND = 0V, VINH = 1.0V, VINL = 0.4V (Note 17, 19), Unless Otherwise Specified TEST CONDITIONS TEMP (C) MIN (NOTE 18) TYP MAX (NOTE 18) UNITS
PARAMETER ANALOG SWITCH CHARACTERISTICS Analog Signal Range, VANALOG ON-Resistance, rON
Full V+ = 1.65V, ICOM = 100mA, VNO or VNC = 0V to V+, (See Figure 5) 25 Full
0 0.5
V+ 0.8 0.85
V
DYNAMIC CHARACTERISTICS Turn-ON Time, tON V+ = 1.65V, VNO or VNC = 1.0V, RL = 50, CL = 35pF, (See Figure 1, Note 20) V+ = 1.65V, VNO or VNC = 1.0V, RL = 50, CL = 35pF, (See Figure 1, Note 20) V+ = 2.0V, VNO or VNC = 1.0V, RL = 50, CL = 35pF, (See Figure 3, Note 20) CL = 1.0nF, VG = 0V, RG = 0, (See Figure 2) RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 4) 25 Full 25 Full Full 25 25 2 9 49 68 50 65 80 90 70 80 ns ns ns ns ns pC dB
Turn-OFF Time, tOFF
Break-Before-Make Time Delay, td Charge Injection, Q OFF Isolation
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Electrical Specifications - 1.8V Supply
Test Conditions: V+ = +1.65V to +2V, GND = 0V, VINH = 1.0V, VINL = 0.4V (Note 17, 19), Unless Otherwise Specified (Continued) TEST CONDITIONS RL = 50, CL = 5pF, f = 100kHz, VCOM = 1VRMS, (See Figure 6) TEMP (C) 25 25 25 MIN (NOTE 18) TYP -95 115 224 MAX (NOTE 18) UNITS dB pF pF
PARAMETER Crosstalk (Channel-to-Channel)
NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) COM ON Capacitance, CCOM(ON) f = 1MHz, VNO or VNC = VCOM = 0V, (See Figure 7) DIGITAL INPUT CHARACTERISTICS Input Voltage Low, VINL Input Voltage High, VINH Input Current, IINH, IINL NOTES: 17. VIN = input voltage to perform proper function. V+ = 2.0V, VIN = 0V or V+ (Note 20)
25 25 Full 1.0 -0.5
0.4
V V
0.5
A
18. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. 19. Parts are 100% tested at +25C. Limits across the full temperature range are guaranteed by design and correlation. 20. Guaranteed but not tested.
Test Circuits and Waveforms
V+ V+ LOGIC INPUT 0V tOFF SWITCH V INPUT NO 90% SWITCH OUTPUT 0V tON VOUT 90% LOGIC INPUT SWITCH INPUT NO OR NC COM IN GND RL 50 CL 35pF VOUT 50% tr < 5ns tf < 5ns C
Logic input waveform is inverted for switches that have the opposite logic sense.
Repeat test for all switches. CL includes fixture and stray capacitance. RL V OUT = V (NO or NC) ----------------------R L + r ON FIGURE 1B. TEST CIRCUIT
FIGURE 1A. MEASUREMENT POINTS FIGURE 1. SWITCHING TIMES
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ISL8484 Test Circuits and Waveforms (Continued)
V+ C
RG SWITCH OUTPUT VOUT VOUT VG V+ LOGIC INPUT ON OFF 0V Q = VOUT x CL ON
NO OR NC
COM
VOUT
GND
IN
CL LOGIC INPUT
Repeat test for all switches. FIGURE 2A. MEASUREMENT POINTS FIGURE 2. CHARGE INJECTION FIGURE 2B. TEST CIRCUIT
V+
C
V+ LOGIC INPUT 0V VNX
NO
COM
NC
VOUT RL 50 CL 35pF
IN SWITCH OUTPUT VOUT 90% 0V tD LOGIC INPUT GND
FIGURE 3A. MEASUREMENT POINTS
Repeat test for all switches. CL includes fixture and stray capacitance. FIGURE 3B. TEST CIRCUIT
FIGURE 3. BREAK-BEFORE-MAKE TIME
V+ C SIGNAL GENERATOR V+ C
NO OR NC
rON = V1/100mA
NO OR NC
IN
0V OR V+
VNX 100mA V1 IN 0V OR V+
ANALYZER RL
COM
GND
COM
GND
Signal direction through switch is reversed, worst case values are recorded. Repeat test for all switches. FIGURE 4. OFF ISOLATION TEST CIRCUIT
Repeat test for all switches. FIGURE 5. rON TEST CIRCUIT
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ISL8484 Test Circuits and Waveforms (Continued)
V+ C V+ C
SIGNAL GENERATOR
NO OR NC
COM
50
NO OR NC
IN IN1 0V or V+ IMPEDANCE ANALYZER
COM
0V OR V+
ANALYZER RL
COM
NC or NO
GND N.C.
GND
Repeat test for all switches. Signal direction through switch is reversed, worst case values are recorded. Repeat test for all switches. FIGURE 6. CROSSTALK TEST CIRCUIT FIGURE 7. CAPACITANCE TEST CIRCUIT
Detailed Description
The ISL8484 is a bidirectional, dual single pole/double throw (SPDT) analog switch that offers precise switching capability from a single 1.65V to 4.5V supply with low on-resistance (0.23) and high speed operation (tON = 20ns, tOFF = 15ns). The device is especially well suited for portable battery powered equipment due to its low operating supply voltage (1.65V), low power consumption (4.5W max), low leakage currents (110nA max), and the tiny DFN and MSOP packages. The ultra low ON-resistance and rON flatness provide very low insertion loss and distortion to applications that require signal reproduction.
.
V+ OPTIONAL PROTECTION RESISTOR
NO
C
100
COM
NC
IN GND
External V+ Series Resistor
For improved ESD and latch-up immunity Intersil recommends adding a 100 resistor in series with the V+ power supply pin of the ISL8484 IC (see Figure 8). During an overvoltage transient event, such as occurs during system level IEC 61000 ESD testing, substrate currents can be generated in the IC that can trigger parasitic SCR structures to turn ON, creating a low impedance path from the V+ power supply to ground. This will result in a significant amount of current flow in the IC which can potentially create a latch-up state or permanently damage the IC. The external V+ resistor limits the current during this over-stress situation and has been found to prevent latch-up or destructive damage for many over voltage transient events. Under normal operation the sub-microamp IDD current of the IC produces an insignificant voltage drop across the 100 series resistor resulting in no impact to switch operation or performance.
FIGURE 8. V+ SERIES RESISTOR FOR ENHANCED ESD AND LATCH-UP IMMUNITY
Supply Sequencing and Overvoltage Protection
With any CMOS device, proper power supply sequencing is required to protect the device from excessive input currents which might permanently damage the IC. All I/O pins contain ESD protection diodes from the pin to V+ and to GND (See Figure 9). To prevent forward biasing these diodes, V+ must be applied before any input signals, and the input signal voltages must remain between V+ and GND. If these conditions cannot be guaranteed, then one of the following two protection methods should be employed. Logic inputs can easily be protected by adding a 1k resistor in series with the input (see Figure 9). The resistor limits the input current below the threshold that produces permanent damage, and the sub-microamp input current produces an insignificant voltage drop during normal operation. This method is not acceptable for the signal path inputs. Adding a series resistor to the switch input defeats the purpose of using a low rON switch, so two small signal
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diodes can be added in series with the supply pins to provide overvoltage protection for all pins (see Figure 9). These additional diodes limit the analog signal from 1V below V+ to 1V above GND. The low leakage current performance is unaffected by this approach, but the switch signal range is reduced and the resistance may increase, especially at low supply voltages. the digital input signals from GND to V+ with a fast transition time minimizes power dissipation. The ISL8484 has been designed to minimize the supply current whenever the digital input voltage is not driven to the supply rails (0V to V+). For example driving the device with 2.85V logic (0V to 2.85V) while operating with a 4.2V supply the device draws only 8A of current (see Figure 15 for VIN = 2.85V).
High-Frequency Performance
OPTIONAL PROTECTION DIODE V+ OPTIONAL PROTECTION RESISTOR INX VNO OR NC VCOM
In 50 systems, the signal response is reasonably flat even past 30MHz with a -3dB bandwidth of 120MHz (See Figure 20). The frequency response is very consistent over a wide V+ range, and for varying analog signal levels. An OFF switch acts like a capacitor and passes higher frequencies with less attenuation, resulting in signal feedthrough from a switch's input to its output. Off isolation is the resistance to this feedthrough, while crosstalk indicates the amount of feedthrough from one switch to another. Figure 21 details the high off Isolation and crosstalk rejection provided by this part. At 100kHz, off Isolation is about 68dB in 50 systems, decreasing approximately 20dB per decade as frequency increases. Higher load impedances decrease off isolation and crosstalk rejection due to the voltage divider action of the switch OFF impedance and the load impedance.
GND OPTIONAL PROTECTION DIODE
FIGURE 9. OVERVOLTAGE PROTECTION
Power-Supply Considerations
The ISL8484 construction is typical of most single supply CMOS analog switches, in that they have two supply pins: V+ and GND. V+ and GND drive the internal CMOS switches and set their analog voltage limits. Unlike switches with a 4V maximum supply voltage, the ISL8484 5.5V maximum supply voltage provides plenty of room for the 10% tolerance of 4.3V supplies, as well as room for overshoot and noise spikes. The minimum recommended supply voltage is 1.65V. It is important to note that the input signal range, switching times, and on-resistance degrade at lower supply voltages. Refer to the "Electrical Specifications" tables, beginning on page 3, and "Typical Performance Curves", beginning on page 10, for details. V+ and GND also power the internal logic and level shiftiers. The level shiftiers convert the input logic levels to switched V+ and GND signals to drive the analog switch gate terminals. This family of switches cannot be operated with bipolar supplies, because the input switching point becomes negative in this configuration.
Leakage Considerations
Reverse ESD protection diodes are internally connected between each analog-signal pin and both V+ and GND. One of these diodes conducts if any analog signal exceeds V+ or GND. Virtually all the analog leakage current comes from the ESD diodes to V+ or GND. Although the ESD diodes on a given signal pin are identical and therefore fairly well balanced, they are reverse biased differently. Each is biased by either V+ or GND and the analog signal. This means their leakages will vary as the signal varies. The difference in the two diode leakages to the V+ and GND pins constitutes the analog-signal-path leakage current. All analog leakage current flows between each pin and one of the supply terminals, not to the other switch terminal. This is why both sides of a given switch can show leakage currents of the same or opposite polarity. There is no connection between the analog signal paths and V+ or GND.
Logic-Level Thresholds
This switch family is 1.8V CMOS compatible (0.5V and 1.4V) over a supply range of 2.7V to 4.5V (See Figure 17). At 2.7V the VIL level is about 0.53V. This is still above the 1.8V CMOS guaranteed low output maximum level of 0.5V, but noise margin is reduced. The digital input stages draw supply current whenever the digital input voltage is not at one of the supply rails. Driving 9
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ISL8484 Typical Performance Curves TA = +25C, Unless Otherwise Specified
0.27 ICOM = 100mA 0.26 2.5 0.25 0.24 rON () 0.23 0.22 0.21 0.20 0.19 0.18 0 1 2 VCOM (V) 3 4 5 V+ = 3.6V V+ = 4.3V V+ = 1.62V 0 0 0.5 V+ = 1.8V 1.0 VCOM (V) 1.5 2.0 V+ = 3V V+ = 2.7V rON () 2.0 V+ = 1.1V 1.5 3.0 ICOM = 100mA
1.0 V+ = 1.5V 0.5
FIGURE 10. ON-RESISTANCE vs SUPPLY VOLTAGE vs SWITCH VOLTAGE
FIGURE 11. ON-RESISTANCE vs SUPPLY VOLTAGE vs SWITCH VOLTAGE
0.28 0.26 0.24 0.22 0.2 +25C 0.18 0.16 0.14 +85C rON () V+ = 4.3V ICOM = 100mA
0.32 0.30 0.28 0.26 +25C 0.24 0.22 -40C -40C 0.20 0.18 0 0.5 1.0 1.5 VCOM (V) 2.0 2.5 3.0 +85C V+ = 2.7V ICOM = 100mA
rON ()
0
1
2 VCOM (V)
3
4
5
FIGURE 12. ON RESISTANCE vs SWITCH VOLTAGE
FIGURE 13. ON-RESISTANCE vs SWITCH VOLTAGE
10
FN6128.3 June 14, 2007
ISL8484 Typical Performance Curves TA = +25C, Unless Otherwise Specified (Continued)
0.50 V+ = 1.8V ICOM = 100mA 0.45 +85C 150 0.40 rON () 200 V+ = 4.2V SWEEPING BOTH LOGIC INPUTS
0.35
i+ (A) +25C -40C 0 0.5 1 VCOM (V) 1.5 2
100
0.30 50
0.25
0.20
0 1 2 VIN1-2 (V) 3 4 5
FIGURE 14. ON-RESISTANCE vs SWITCH VOLTAGE
FIGURE 15. VLOGIC vs SUPPLY VOLTAGE
150
1.1 1.0
100 0.9 VINH VINH AND VINL (V) 50 Q (pC) V+ = 4.3V 0 V+ = 1.8V 0.8 0.7 VINL 0.6 0.5 0.4 -100 0 1 2 VCOM (V) 3 4 5 0.3 1.5 2.0 2.5 3.0 V+ (V) 3.5 4.0 4.5
V+ = 3V -50
FIGURE 16. CHARGE INJECTION vs SWITCH VOLTAGE
FIGURE 17. DIGITAL SWITCHING POINT vs SUPPLY VOLTAGE
11
FN6128.3 June 14, 2007
ISL8484 Typical Performance Curves TA = +25C, Unless Otherwise Specified (Continued)
200 200
150
150
tON (ns)
100
tOFF (ns)
+85C +25C -40C
100
+85C +25C
50
50
-40C
0 1.0
1.5
2.0
2.5 3.0 V+ (V)
3.5
4.0
4.5
0 1.0
1.5
2.0
2.5 3.0 V+ (V)
3.5
4.0
4.5
FIGURE 18. TURN-ON TIME vs SUPPLY VOLTAGE
FIGURE 19. TURN-OFF TIME vs SUPPLY VOLTAGE
NORMALIZED GAIN (dB)
-10 V+ = 3V 0 -20 -20 GAIN -30 -40 CROSSTALK (dB) 0 20 40 PHASE () 60 80 RL = 50 VIN = 0.2VP-P to 2VP-P 1M 10M 100M FREQUENCY (Hz) 100 600M -50 -60 ISOLATION -70 -80 CROSSTALK -90 -100 -110 1k V+ = 3V
10 20 30 OFF ISOLATION (dB) 40 50 60 70 80 90 100 110 100M 500M
PHASE
10k
100k
1M
10M
FREQUENCY (Hz)
FIGURE 20. FREQUENCY RESPONSE
FIGURE 21. CROSSTALK AND OFF ISOLATION
12
FN6128.3 June 14, 2007
ISL8484 Typical Performance Curves TA = +25C, Unless Otherwise Specified (Continued)
100 V+ = 4.5V 50 V+ = 4.5V VCOM = 03V 0 +25C iON (nA) iOFF (nA)
50
0
+25C
-50
-50 +85C -100 0 1 2 3 VCOM/NX (V) 4 5
-100
+85C
-150 0 1 2 VNX (V) 3 4 5
FIGURE 22. ON LEAKAGE vs SWITCH VOLTAGE
FIGURE 23. OFF LEAKAGE vs SWITCH VOLTAGE
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP): GND (DFN Paddle Connection: Tie to GND or Float) TRANSISTOR COUNT: 114 PROCESS: Submicron CMOS
13
FN6128.3 June 14, 2007
ISL8484 Thin Dual Flat No-Lead Plastic Package (TDFN)
2X 0.10 C A A D 2X 0.10 C B
L10.3x3A
10 LEAD THIN DUAL FLAT NO-LEAD PLASTIC PACKAGE MILLIMETERS SYMBOL A A1
E
MIN 0.70 -
NOMINAL 0.75 0.20 REF
MAX 0.80 0.05
NOTES -
6 INDEX AREA TOP VIEW B
A3 b D D2 E
// A 0.10 C 0.08 C
0.20 2.95 2.25 2.95 1.45
0.25 3.0 2.30 3.0 1.50 0.50 BSC
0.30 3.05 2.35 3.05 1.55
5, 8 7, 8 7, 8 -
E2 e k
0.25 0.25
0.30 10 5
0.35
8 2 3 Rev. 3 3/06
C SEATING PLANE
SIDE VIEW
A3
L N
D2 (DATUM B) 1 2 D2/2
7
8
Nd NOTES:
6 INDEX AREA (DATUM A)
1. Dimensioning and tolerancing conform to ASME Y14.5-1994.
NX k E2 E2/2
2. N is the number of terminals. 3. Nd refers to the number of terminals on D. 4. All dimensions are in millimeters. Angles are in degrees. 5. Dimension b applies to the metallized terminal and is measured between 0.15mm and 0.30mm from the terminal tip. 6. The configuration of the pin #1 identifier is optional, but must be located within the zone indicated. The pin #1 identifier may be either a mold or mark feature.
NX L N 8 N-1 NX b e (Nd-1)Xe REF. BOTTOM VIEW C L NX (b) 5 SECTION "C-C" CC e TERMINAL TIP (A1) L1 9L 5 0.10 M C A B
7. Dimensions D2 and E2 are for the exposed pads which provide improved electrical and thermal performance. 8. Nominal dimensions are provided to assist with PCB Land Pattern Design efforts, see Intersil Technical Brief TB389. 9. Compliant to JEDEC MO-229-WEED-3 except for D2 dimensions.
FOR ODD TERMINAL/SIDE
14
FN6128.3 June 14, 2007
ISL8484 Mini Small Outline Plastic Packages (MSOP)
N
M10.118 (JEDEC MO-187BA)
10 LEAD MINI SMALL OUTLINE PLASTIC PACKAGE INCHES SYMBOL A MIN 0.037 0.002 0.030 0.007 0.004 0.116 0.116 0.187 0.016 MAX 0.043 0.006 0.037 0.011 0.008 0.120 0.120 0.199 0.028 MILLIMETERS MIN 0.94 0.05 0.75 0.18 0.09 2.95 2.95 4.75 0.40 MAX 1.10 0.15 0.95 0.27 0.20 3.05 3.05 5.05 0.70 NOTES 9 3 4 6 7 15o 6o Rev. 0 12/02
E1
E
A1 A2
ABC
INDEX AREA
-B12 TOP VIEW 0.25 (0.010) GAUGE PLANE SEATING PLANE -C4X R1 R 0.20 (0.008)
b c D E1 e E
0.020 BSC
0.50 BSC
4X
L L1
L L1 N
A
A2
0.037 REF 10 0.003 0.003 5o 0o 15o 6o
0.95 REF 10 0.07 0.07 5o 0o
A1
-He D
b
0.10 (0.004) -A0.20 (0.008)
C
SEATING PLANE
R R1
C a C L E1
C
SIDE VIEW
-B-
0.20 (0.008)
CD
END VIEW
NOTES: 1. These package dimensions are within allowable dimensions of JEDEC MO-187BA. 2. Dimensioning and tolerancing per ANSI Y14.5M-1994. 3. Dimension "D" does not include mold flash, protrusions or gate burrs and are measured at Datum Plane. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006 inch) per side. 4. Dimension "E1" does not include interlead flash or protrusions and are measured at Datum Plane. - H - Interlead flash and protrusions shall not exceed 0.15mm (0.006 inch) per side. 5. Formed leads shall be planar with respect to one another within 0.10mm (.004) at seating Plane. 6. "L" is the length of terminal for soldering to a substrate. 7. "N" is the number of terminal positions. 8. Terminal numbers are shown for reference only. 9. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.08mm (0.003 inch) total in excess of "b" dimension at maximum material condition. Minimum space between protrusion and adjacent lead is 0.07mm (0.0027 inch). 10. Datums -A -H- . and - B to be determined at Datum plane
11. Controlling dimension: MILLIMETER. Converted inch dimensions are for reference only
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems. Intersil Corporation's quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com 15
FN6128.3 June 14, 2007

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